Технічний опис 2N7370 Microchip Technology
Description: POWER BJT, Packaging: Bulk, Package / Case: TO-254-3, TO-254AA, Mounting Type: Through Hole, Transistor Type: NPN - Darlington, Operating Temperature: -65°C ~ 175°C (TJ), Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A, Current - Collector Cutoff (Max): 1mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V, Supplier Device Package: TO-254AA, Current - Collector (Ic) (Max): 12 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 100 W.
Інші пропозиції 2N7370
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| 2N7370 | Виробник : Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-254-3, TO-254AA Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V Supplier Device Package: TO-254AA Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 100 W |
товару немає в наявності |
||
 |
2N7370 | Виробник : Microchip Technology | Darlington Transistors 100V Low-Profile Power BJT |
товару немає в наявності |