2PD601AR,115 NXP
Виробник: NXP
Description: NXP - 2PD601AR,115 - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
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Технічний опис 2PD601AR,115 NXP
Description: TRANS NPN 50V 0.1A SMT3 MPAK, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 10nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V, Frequency - Transition: 100MHz, Supplier Device Package: SMT3; MPAK, Part Status: Obsolete, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW.
Інші пропозиції 2PD601AR,115
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
2PD601AR,115 | NXP USA Inc. |
Description: TRANS NPN 50V 0.1A SMT3 MPAK Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V Frequency - Transition: 100MHz Supplier Device Package: SMT3; MPAK Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW |
товару немає в наявності |
В кошику од. на суму грн. |
 |
2PD601AR,115 | Nexperia |
Bipolar Transistors - BJT TRANS GP TAPE-7 |
товару немає в наявності |
В кошику од. на суму грн. |
| 2PD601AR,115 |
|
Виробник: NXP USA Inc.
Description: TRANS NPN 50V 0.1A SMT3 MPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: SMT3; MPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Description: TRANS NPN 50V 0.1A SMT3 MPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: SMT3; MPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
товару немає в наявності
В кошику
од. на суму грн.
| 2PD601AR,115 |
|
Виробник: Nexperia
Bipolar Transistors - BJT TRANS GP TAPE-7
Bipolar Transistors - BJT TRANS GP TAPE-7
товару немає в наявності
В кошику
од. на суму грн.