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Технічний опис 2SA1216
- TRANSISTOR, PNP MT-200
- Transistor Polarity:PNP
- Collector-to-Emitter Breakdown Voltage:180V
- Typ Gain Bandwidth ft:40MHz
- Av Current Ic:17A
- Case Style:MT-200
- Current Ib:5A
- Current Ic hFE:8A
- Full Power Rating Temperature:25`C
- Max Current Ic:17A
- Max Current Ic Continuous a:17A
- Max Junction Temperature Tj:150`C
- Max Power Dissipation Ptot:200W
- Max Voltage Vce Sat:2V
- Min Hfe:30
- No. of Transistors:1
- Pulsed Current Icm:16A
- Transistor Type:Power General Purpose
- Voltage Vcbo:180V
