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2SA1313-O(TE85L,F)

2SA1313-O(TE85L,F) Toshiba

2FC22B939F440894714B833F648F5316498FED53735ECDA4613313554C54C54F.pdf
Виробник: Toshiba
Bipolar Transistors - BJT S-MINI PLN TRANSIST Pd=200mW F=200MHz
на замовлення 5759 шт:
термін постачання 21-30 дні (днів)
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Технічний опис 2SA1313-O(TE85L,F) Toshiba

Description: TRANS PNP 50V 0.5A S-MINI, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V, Frequency - Transition: 200MHz, Supplier Device Package: S-Mini, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW.

Інші пропозиції 2SA1313-O(TE85L,F)

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
2SA1313-O(TE85L,F) 2SA1313-O(TE85L,F) Toshiba Semiconductor and Storage 2SA1313_datasheet_en_20140301.pdf?did=19265&prodName=2SA1313 Description: TRANS PNP 50V 0.5A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: S-Mini
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SA1313-O(TE85L,F) 2SA1313-O(TE85L,F) Toshiba Semiconductor and Storage 2SA1313_datasheet_en_20140301.pdf?did=19265&prodName=2SA1313 Description: TRANS PNP 50V 0.5A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: S-Mini
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
2SA1313-O(TE85L,F) 2SA1313_datasheet_en_20140301.pdf?did=19265&prodName=2SA1313
2SA1313-O(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.5A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: S-Mini
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SA1313-O(TE85L,F) 2SA1313_datasheet_en_20140301.pdf?did=19265&prodName=2SA1313
2SA1313-O(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.5A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: S-Mini
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.