Технічний опис 2SA2205-E ON Semiconductor
Description: TRANS PNP 100V 2A TP, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 1A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V, Frequency - Transition: 300MHz, Supplier Device Package: TP, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 800 mW.
Інші пропозиції 2SA2205-E
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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2SA2205-E | Виробник : ON Semiconductor |
 Trans GP BJT PNP 100V 2A 800mW 3-Pin(2+Tab) DPAK Bag |
товар відсутній |
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2SA2205-E | Виробник : onsemi |
Description: TRANS PNP 100V 2A TP Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 800 mW |
товар відсутній |