2SAR514P5T100 Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: TRANS PNP 80V 0.7A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 700 mA
Supplier Device Package: MPT3
Frequency - Transition: 380MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 300mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
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Технічний опис 2SAR514P5T100 Rohm Semiconductor
Description: TRANS PNP 80V 0.7A MPT3, Power - Max: 500 mW, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 700 mA, Supplier Device Package: MPT3, Frequency - Transition: 380MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V, Current - Collector Cutoff (Max): 1µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 300mA, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-243AA, Packaging: Tape & Reel (TR).
Інші пропозиції 2SAR514P5T100 за ціною від 7.32 грн до 46.39 грн
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2SAR514P5T100 | Rohm Semiconductor |
Description: TRANS PNP 80V 0.7A MPT3 Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 700 mA Supplier Device Package: MPT3 Frequency - Transition: 380MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 300mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Cut Tape (CT) |
на замовлення 1171 шт: термін постачання 21-31 дні (днів) |
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2SAR514P5T100 | ROHM Semiconductor |
Bipolar Transistors - BJT PNP -80V Vceo -0.7A Ic MPT3 |
на замовлення 927 шт: термін постачання 21-30 дні (днів) |
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| 2SAR514P5T100 |
|
Виробник: Rohm Semiconductor
Description: TRANS PNP 80V 0.7A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 700 mA
Supplier Device Package: MPT3
Frequency - Transition: 380MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 300mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Description: TRANS PNP 80V 0.7A MPT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 700 mA
Supplier Device Package: MPT3
Frequency - Transition: 380MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 300mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
на замовлення 1171 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 28.74 грн |
| 13+ | 23.78 грн |
| 100+ | 16.51 грн |
| 500+ | 12.10 грн |
| 2SAR514P5T100 |
|
Виробник: ROHM Semiconductor
Bipolar Transistors - BJT PNP -80V Vceo -0.7A Ic MPT3
Bipolar Transistors - BJT PNP -80V Vceo -0.7A Ic MPT3
на замовлення 927 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 46.39 грн |
| 12+ | 28.42 грн |
| 100+ | 15.88 грн |
| 500+ | 12.08 грн |
| 1000+ | 9.53 грн |
| 2000+ | 8.15 грн |
| 5000+ | 7.32 грн |