2SAR563F3TR Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: TRANS PNP 50V 6A HUML2020L3
Packaging: Tape & Reel (TR)
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 6 A
Part Status: Active
Supplier Device Package: HUML2020L3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-UDFN Exposed Pad
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Технічний опис 2SAR563F3TR Rohm Semiconductor
Description: TRANS PNP 50V 6A HUML2020L3, Packaging: Tape & Reel (TR), Power - Max: 1 W, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 6 A, Part Status: Active, Supplier Device Package: HUML2020L3, Frequency - Transition: 200MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V, Current - Collector Cutoff (Max): 1µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: 3-UDFN Exposed Pad.
Інші пропозиції 2SAR563F3TR за ціною від 27.75 грн до 103.06 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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2SAR563F3TR | Rohm Semiconductor |
Description: TRANS PNP 50V 6A HUML2020L3 Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 6 A Part Status: Active Supplier Device Package: HUML2020L3 Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: 3-UDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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2SAR563F3TR | ROHM Semiconductor |
Bipolar Transistors - BJT Small and Excellent Thermal Conductivity, PNP -6A -50V Middle Power Transistor |
на замовлення 4870 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| 2SAR563F3TR |
|
Виробник: Rohm Semiconductor
Description: TRANS PNP 50V 6A HUML2020L3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 6 A
Part Status: Active
Supplier Device Package: HUML2020L3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: TRANS PNP 50V 6A HUML2020L3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 6 A
Part Status: Active
Supplier Device Package: HUML2020L3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-UDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 103.06 грн |
| 10+ | 62.53 грн |
| 100+ | 41.50 грн |
| 500+ | 30.47 грн |
| 1000+ | 27.75 грн |
| 2SAR563F3TR |
|
Виробник: ROHM Semiconductor
Bipolar Transistors - BJT Small and Excellent Thermal Conductivity, PNP -6A -50V Middle Power Transistor
Bipolar Transistors - BJT Small and Excellent Thermal Conductivity, PNP -6A -50V Middle Power Transistor
на замовлення 4870 шт:
термін постачання 21-30 дні (днів)