2SAR572DGTL Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: TRANS PNP 30V 5A CPT3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 3V
Frequency - Transition: 300MHz
Supplier Device Package: CPT3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 10 W
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Технічний опис 2SAR572DGTL Rohm Semiconductor
Description: TRANS PNP 30V 5A CPT3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 2A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 3V, Frequency - Transition: 300MHz, Supplier Device Package: CPT3, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 10 W.
Інші пропозиції 2SAR572DGTL
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2SAR572DGTL | Виробник : Rohm Semiconductor |
Description: TRANS PNP 30V 5A CPT3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 3V Frequency - Transition: 300MHz Supplier Device Package: CPT3 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 10 W |
товару немає в наявності |
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2SAR572DGTL | Виробник : ROHM Semiconductor |
Bipolar Transistors - BJT I2C BUS 8Kbit EEPROM |
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