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2SB1166S

2SB1166S onsemi

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Виробник: onsemi
Description: PNP SILICON TRANSISTOR
Part Status: Active
Packaging: Bulk
Power - Max: 1.2 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 8 A
Supplier Device Package: TO-126LP
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 4A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
606+37.75 грн
Мінімальне замовлення: 606 шт
В кошику  од. на суму  грн.
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Технічний опис 2SB1166S onsemi

Description: PNP SILICON TRANSISTOR, Part Status: Active, Packaging: Bulk, Power - Max: 1.2 W, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 8 A, Supplier Device Package: TO-126LP, Frequency - Transition: 130MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V, Current - Collector Cutoff (Max): 1µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 4A, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-225AA, TO-126-3.