2SB1186AE Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: TRANS PNP 160V 1.5A TO220FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1A, 5V
Frequency - Transition: 50MHz
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 2 W
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Технічний опис 2SB1186AE Rohm Semiconductor
Description: TRANS PNP 160V 1.5A TO220FP, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 2V @ 100mA, 1A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1A, 5V, Frequency - Transition: 50MHz, Supplier Device Package: TO-220FP, Current - Collector (Ic) (Max): 1.5 A, Voltage - Collector Emitter Breakdown (Max): 160 V, Power - Max: 2 W.
Інші пропозиції 2SB1186AE
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| 2SB1186AE | Виробник : ROHM Semiconductor |
Bipolar Transistors - BJT Discrete Semiconductor Products |
товару немає в наявності |