2SB1186AE Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: TRANS PNP 160V 1.5A TO220FP
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 1.5 A
Supplier Device Package: TO-220FP
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1A, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 2V @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
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Технічний опис 2SB1186AE Rohm Semiconductor
Description: TRANS PNP 160V 1.5A TO220FP, Power - Max: 2 W, Voltage - Collector Emitter Breakdown (Max): 160 V, Current - Collector (Ic) (Max): 1.5 A, Supplier Device Package: TO-220FP, Frequency - Transition: 50MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1A, 5V, Current - Collector Cutoff (Max): 1µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 2V @ 100mA, 1A, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Bulk.
Інші пропозиції 2SB1186AE
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| 2SB1186AE | ROHM Semiconductor |
Bipolar Transistors - BJT Discrete Semiconductor Products |
товару немає в наявності |
В кошику од. на суму грн. |
| 2SB1186AE |
|
Виробник: ROHM Semiconductor
Bipolar Transistors - BJT Discrete Semiconductor Products
Bipolar Transistors - BJT Discrete Semiconductor Products
товару немає в наявності
В кошику
од. на суму грн.