Технічний опис 2SB1197-R-TP Micro Commercial Components
Description: Interface, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 100mA, 3V, Frequency - Transition: 50MHz, Supplier Device Package: SOT-23, Part Status: Active, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 32 V, Power - Max: 200 mW.
Інші пропозиції 2SB1197-R-TP
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
2SB1197-R-TP | Виробник : Micro Commercial Co |
 Description: InterfacePackaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 100mA, 3V Frequency - Transition: 50MHz Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 200 mW |
товару немає в наявності |
|
| 2SB1197-R-TP | Виробник : Micro Commercial Components (MCC) |
Bipolar Transistors - BJT PNP SILICON EPITAXIAL TRANSISTOR |
товару немає в наявності |