2SB1197A_R1_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: SOT-23, TRANSISTOR
Power - Max: 1.25 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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Технічний опис 2SB1197A_R1_00001 Panjit International Inc.
Description: SOT-23, TRANSISTOR, Power - Max: 1.25 W, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 3 A, Part Status: Active, Supplier Device Package: SOT-23, Frequency - Transition: 180MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V, Current - Collector Cutoff (Max): 100nA, Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції 2SB1197A_R1_00001 за ціною від 5.31 грн до 33.78 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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2SB1197A_R1_00001 | PanJit Semiconductor |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 3A; 1.25W; SOT23 Mounting: SMD Case: SOT23 Type of transistor: PNP Power dissipation: 1.25W Collector current: 3A Pulsed collector current: 3.5A Collector-emitter voltage: 50V Current gain: 100...300 Frequency: 180MHz Polarisation: bipolar |
на замовлення 1961 шт: термін постачання 14-30 дні (днів) |
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2SB1197A_R1_00001 | Panjit |
Bipolar Transistors - BJT PNP Low Vce(sat) Transistor |
на замовлення 2302 шт: термін постачання 21-30 дні (днів) |
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2SB1197A_R1_00001 | Panjit International Inc. |
Description: SOT-23, TRANSISTOR Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Power - Max: 1.25 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 3 A Part Status: Active Supplier Device Package: SOT-23 Frequency - Transition: 180MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount |
на замовлення 8613 шт: термін постачання 21-31 дні (днів) |
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| 2SB1197A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Type of transistor: PNP
Power dissipation: 1.25W
Collector current: 3A
Pulsed collector current: 3.5A
Collector-emitter voltage: 50V
Current gain: 100...300
Frequency: 180MHz
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Type of transistor: PNP
Power dissipation: 1.25W
Collector current: 3A
Pulsed collector current: 3.5A
Collector-emitter voltage: 50V
Current gain: 100...300
Frequency: 180MHz
Polarisation: bipolar
на замовлення 1961 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 20+ | 23.53 грн |
| 28+ | 15.05 грн |
| 100+ | 8.74 грн |
| 1000+ | 6.05 грн |
| 2SB1197A_R1_00001 |
|
Виробник: Panjit
Bipolar Transistors - BJT PNP Low Vce(sat) Transistor
Bipolar Transistors - BJT PNP Low Vce(sat) Transistor
на замовлення 2302 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 31.53 грн |
| 17+ | 19.03 грн |
| 100+ | 10.54 грн |
| 500+ | 7.89 грн |
| 1000+ | 6.98 грн |
| 3000+ | 5.80 грн |
| 6000+ | 5.31 грн |
| 2SB1197A_R1_00001 |
|
Виробник: Panjit International Inc.
Description: SOT-23, TRANSISTOR
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 1.25 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Description: SOT-23, TRANSISTOR
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 1.25 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: SOT-23
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
на замовлення 8613 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 33.78 грн |
| 16+ | 19.90 грн |
| 100+ | 12.56 грн |
| 500+ | 8.81 грн |
| 1000+ | 7.84 грн |