 
2SB1204T-E onsemi
                                                                                Виробник: onsemi
Description: TRANS PNP 50V 8A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 4A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
            
                    Description: TRANS PNP 50V 8A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 4A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
на замовлення 9500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна | 
|---|---|
| 568+ | 38.34 грн | 
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Технічний опис 2SB1204T-E onsemi
Description: TRANS PNP 50V 8A TP, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 4A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V, Frequency - Transition: 130MHz, Supplier Device Package: TP, Part Status: Obsolete, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 1 W. 
Інші пропозиції 2SB1204T-E
| Фото | Назва | Виробник | Інформація | Доступність | Ціна | 
|---|---|---|---|---|---|
|   | 2SB1204T-E | Виробник : onsemi |  Bipolar Transistors - BJT BIP PNP 8A 50V | на замовлення 1127 шт:термін постачання 21-30 дні (днів) | |
|   | 2SB1204T-E | Виробник : ON Semiconductor |  Trans GP BJT PNP 50V 8A 1000mW 3-Pin(3+Tab) IPAK Bag | товару немає в наявності | |
|   | 2SB1204T-E | Виробник : onsemi | Description: TRANS PNP 50V 8A TP Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 4A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 130MHz Supplier Device Package: TP Part Status: Obsolete Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W | товару немає в наявності |