Технічний опис 2SB1215T-H ON Semiconductor
Description: TRANS PNP 100V 3A TP, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 1.5A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V, Frequency - Transition: 130MHz, Supplier Device Package: TP, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 1 W.
Інші пропозиції 2SB1215T-H
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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2SB1215T-H | Виробник : ON Semiconductor |
 Trans GP BJT PNP 100V 3A 1000mW 3-Pin(3+Tab) TP Bag |
товару немає в наявності |
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2SB1215T-H | Виробник : onsemi |
Description: TRANS PNP 100V 3A TP Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 1.5A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V Frequency - Transition: 130MHz Supplier Device Package: TP Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1 W |
товару немає в наявності |