2SB1216S-TL-E onsemi
Виробник: onsemi
Description: TRANS PNP 100V 4A TPFA
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TP-FA
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Технічний опис 2SB1216S-TL-E onsemi
Description: TRANS PNP 100V 4A TPFA, Power - Max: 1 W, Voltage - Collector Emitter Breakdown (Max): 100 V, Current - Collector (Ic) (Max): 4 A, Supplier Device Package: TP-FA, Frequency - Transition: 130MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V, Current - Collector Cutoff (Max): 1µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції 2SB1216S-TL-E за ціною від 36.26 грн до 62.77 грн
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2SB1216S-TL-E | onsemi |
Description: TRANS PNP 100V 4A TPFA Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 4 A Supplier Device Package: TP-FA Frequency - Transition: 130MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V Current - Collector Cutoff (Max): 1µA (ICBO) |
на замовлення 1071 шт: термін постачання 21-31 дні (днів) |
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2SB1216S-TL-E | ON Semiconductor |
Bipolar Transistors - BJT BIP PNP 4A 100V |
на замовлення 2240 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| 2SB1216S-TL-E |
|
Виробник: onsemi
Description: TRANS PNP 100V 4A TPFA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TP-FA
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Description: TRANS PNP 100V 4A TPFA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TP-FA
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
на замовлення 1071 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 62.77 грн |
| 10+ | 52.38 грн |
| 100+ | 36.26 грн |
| 2SB1216S-TL-E |
|
Виробник: ON Semiconductor
Bipolar Transistors - BJT BIP PNP 4A 100V
Bipolar Transistors - BJT BIP PNP 4A 100V
на замовлення 2240 шт:
термін постачання 21-30 дні (днів)