2SB1260T100P Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: TRANS PNP 80V 1A MPT3
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Not For New Designs
Supplier Device Package: MPT3
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 100mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
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Технічний опис 2SB1260T100P Rohm Semiconductor
Description: TRANS PNP 80V 1A MPT3, Power - Max: 2 W, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 1 A, Part Status: Not For New Designs, Supplier Device Package: MPT3, Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 100mA, 3V, Current - Collector Cutoff (Max): 1µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-243AA, Packaging: Tape & Reel (TR).
Інші пропозиції 2SB1260T100P
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| 2SB1260T100P | ROHM Semiconductor |
 Bipolar Transistors - BJT DVR PNP 80V 1A |
товару немає в наявності |
В кошику од. на суму грн. |
| 2SB1260T100P |
|
Виробник: ROHM Semiconductor
Bipolar Transistors - BJT DVR PNP 80V 1A
Bipolar Transistors - BJT DVR PNP 80V 1A
товару немає в наявності
В кошику
од. на суму грн.