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2SB1706TL

2SB1706TL ROHM Semiconductor

datasheet?p=2SB1706&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM Semiconductor
Bipolar Transistors - BJT PNP 30V 2A
на замовлення 2990 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+61.04 грн
10+39.22 грн
100+22.22 грн
500+17.30 грн
1000+15.40 грн
3000+12.10 грн
Мінімальне замовлення: 6
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Технічний опис 2SB1706TL ROHM Semiconductor

Description: TRANS PNP 30V 2A TSMT3, Power - Max: 500 mW, Voltage - Collector Emitter Breakdown (Max): 30 V, Current - Collector (Ic) (Max): 2 A, Supplier Device Package: TSMT3, Frequency - Transition: 280MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 370mV @ 75mA, 1.5A, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: SC-96, Packaging: Tape & Reel (TR).

Інші пропозиції 2SB1706TL

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2SB1706TL 2SB1706TL Rohm Semiconductor datasheet?p=2SB1706&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 30V 2A TSMT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: TSMT3
Frequency - Transition: 280MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 75mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
2SB1706TL 2SB1706TL Rohm Semiconductor datasheet?p=2SB1706&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 30V 2A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V
Frequency - Transition: 280MHz
Supplier Device Package: TSMT3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SB1706TL datasheet?p=2SB1706&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SB1706TL
Виробник: Rohm Semiconductor
Description: TRANS PNP 30V 2A TSMT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: TSMT3
Frequency - Transition: 280MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 75mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
2SB1706TL datasheet?p=2SB1706&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SB1706TL
Виробник: Rohm Semiconductor
Description: TRANS PNP 30V 2A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V
Frequency - Transition: 280MHz
Supplier Device Package: TSMT3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
товару немає в наявності
В кошику  од. на суму  грн.