2SB562CTZ-E Renesas Electronics Corporation
Виробник: Renesas Electronics CorporationDescription: SMALL SIGNAL BIPOLAR TRANS PNP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 350MHz
Supplier Device Package: TO-92MOD
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 900 mW
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1475+ | 14.59 грн |
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Технічний опис 2SB562CTZ-E Renesas Electronics Corporation
Description: SMALL SIGNAL BIPOLAR TRANS PNP, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 Long Body, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V, Frequency - Transition: 350MHz, Supplier Device Package: TO-92MOD, Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 20 V, Power - Max: 900 mW.