2SB647DTZ Renesas Electronics Corporation
Виробник: Renesas Electronics CorporationDescription: SMALL SIGNAL BIPOLAR TRANSISTOR,
Packaging: Bulk
Part Status: Active
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 150mA, 5V
Frequency - Transition: 140MHz
Supplier Device Package: TO-92MOD
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
на замовлення 19950 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 478+ | 42.39 грн |
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Технічний опис 2SB647DTZ Renesas Electronics Corporation
Description: SMALL SIGNAL BIPOLAR TRANSISTOR,, Packaging: Bulk, Part Status: Active, Package / Case: TO-226-3, TO-92-3 Long Body, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 150mA, 5V, Frequency - Transition: 140MHz, Supplier Device Package: TO-92MOD, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 800 mW.