Технічний опис 2SB817C-1E ON Semiconductor
Description: TRANS PNP 140V 12A TO-3P-3L, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A, Current - Collector Cutoff (Max): 100µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V, Frequency - Transition: 10MHz, Supplier Device Package: TO-3P-3L, Part Status: Obsolete, Current - Collector (Ic) (Max): 12 A, Voltage - Collector Emitter Breakdown (Max): 140 V, Power - Max: 120 W.
Інші пропозиції 2SB817C-1E
| Фото | Назва | Виробник | Інформація |
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Ціна |
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2SB817C-1E | Виробник : onsemi |
 Description: TRANS PNP 140V 12A TO-3P-3LPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V Frequency - Transition: 10MHz Supplier Device Package: TO-3P-3L Part Status: Obsolete Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 120 W |
товару немає в наявності |
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| 2SB817C-1E | Виробник : onsemi |
Bipolar Transistors - BJT Bipolar Transistor, -140V, -12A, Low VCE(sat) PNP TO-3P-3L |
товару немає в наявності |