2SB860-E Renesas Electronics Corporation
Виробник: Renesas Electronics Corporation
Description: TRANS PNP 100V 4A TO-220AB
Packaging: Bulk
Part Status: Active
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 4V
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.8 W
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Технічний опис 2SB860-E Renesas Electronics Corporation
Description: TRANS PNP 100V 4A TO-220AB, Packaging: Bulk, Part Status: Active, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -40°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A, Current - Collector Cutoff (Max): 100µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 4V, Supplier Device Package: TO-220AB, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 1.8 W.