2SC0435T2G1-17 Power Integrations
Виробник: Power Integrations
Description: IC GATE DRVR HI/LOW SIDE MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 14.5V ~ 15.5V
High Side Voltage - Max (Bootstrap): 1700 V
Supplier Device Package: Module
Rise / Fall Time (Typ): 20ns, 20ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Current - Peak Output (Source, Sink): 35A, 35A
Part Status: Active
DigiKey Programmable: Not Verified
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Технічний опис 2SC0435T2G1-17 Power Integrations
Description: IC GATE DRVR HI/LOW SIDE MODULE, Packaging: Tray, Package / Case: Module, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 14.5V ~ 15.5V, High Side Voltage - Max (Bootstrap): 1700 V, Supplier Device Package: Module, Rise / Fall Time (Typ): 20ns, 20ns, Channel Type: Independent, Driven Configuration: High-Side or Low-Side, Number of Drivers: 2, Gate Type: IGBT, MOSFET (N-Channel, P-Channel), Current - Peak Output (Source, Sink): 35A, 35A, Part Status: Active, DigiKey Programmable: Not Verified.
Інші пропозиції 2SC0435T2G1-17
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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2SC0435T2G1-17 | Виробник : Power Integrations |
Gate Drivers Dual Ch SCALE 1700V IGBT Driver HVIC |
товару немає в наявності |
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| 2SC0435T2G1-17 | Виробник : POWER INTEGRATIONS |
Category: IGBT modules Description: Module: gate driver board; IGBT half-bridge,MOSFET half-bridge Operating temperature: -40...85°C Mounting: pin header Integrated circuit features: galvanically isolated; integrated DC/DC converter Type of semiconductor module: gate driver board Kind of output: IGBT driver Supply voltage: 14.5...15.5V DC Output current: 35A Voltage class: 1.7kV Frequency: 0.1MHz Technology: SCALE™-2+ Topology: IGBT half-bridge; MOSFET half-bridge |
товару немає в наявності |