2SC3138-Y(TE85L,F) Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 200V 0.05A TO-236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 3V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 150 mW
Description: TRANS NPN 200V 0.05A TO-236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 3V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 150 mW
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Технічний опис 2SC3138-Y(TE85L,F) Toshiba Semiconductor and Storage
Description: TRANS NPN 200V 0.05A TO-236, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 125°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 3V, Frequency - Transition: 100MHz, Supplier Device Package: TO-236, Current - Collector (Ic) (Max): 50 mA, Voltage - Collector Emitter Breakdown (Max): 200 V, Power - Max: 150 mW.
Інші пропозиції 2SC3138-Y(TE85L,F)
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2SC3138-Y(TE85L,F) | Виробник : Toshiba Semiconductor and Storage |
Description: TRANS NPN 200V 0.05A TO-236 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 3V Frequency - Transition: 100MHz Supplier Device Package: TO-236 Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 200 V Power - Max: 150 mW |
товару немає в наявності |