2SC3138-Y(TE85L,F) Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 200V 0.05A TO-236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 3V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 150 mW
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Технічний опис 2SC3138-Y(TE85L,F) Toshiba Semiconductor and Storage
Description: TRANS NPN 200V 0.05A TO-236, Power - Max: 150 mW, Voltage - Collector Emitter Breakdown (Max): 200 V, Current - Collector (Ic) (Max): 50 mA, Supplier Device Package: TO-236, Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 3V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA, Operating Temperature: 125°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції 2SC3138-Y(TE85L,F)
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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2SC3138-Y(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS NPN 200V 0.05A TO-236 Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 200 V Current - Collector (Ic) (Max): 50 mA Supplier Device Package: TO-236 Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 3V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Operating Temperature: 125°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
| 2SC3138-Y(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 200V 0.05A TO-236
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 200 V
Current - Collector (Ic) (Max): 50 mA
Supplier Device Package: TO-236
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 3V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TRANS NPN 200V 0.05A TO-236
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 200 V
Current - Collector (Ic) (Max): 50 mA
Supplier Device Package: TO-236
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 3V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.