2SC3954E onsemi

Description: NPN SILICON TRANSISTOR, Power - Max: 1.3 W, Voltage - Collector Emitter Breakdown (Max): 120 V, Current - Collector (Ic) (Max): 300 mA, Supplier Device Package: TO-126ML, Frequency - Transition: 400MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-225AA, TO-126-3, Part Status: Active, Packaging: Bulk.