2SC3956E onsemi


SNYOS14045-1.pdf?t.download=true&u=5oefqw
Виробник: onsemi
Description: NPN SILICON TRANSISTOR
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 3mA, 30mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: TO-126ML
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 1.3 W
на замовлення 8000 шт:

термін постачання 21-31 дні (днів)
КількістьЦіна
1158+18.85 грн
Мінімальне замовлення: 1158 шт
В кошику  од. на суму  грн.
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Технічний опис 2SC3956E onsemi

Description: NPN SILICON TRANSISTOR, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 3mA, 30mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V, Frequency - Transition: 300MHz, Supplier Device Package: TO-126ML, Part Status: Active, Current - Collector (Ic) (Max): 200 mA, Voltage - Collector Emitter Breakdown (Max): 200 V, Power - Max: 1.3 W.