2SC5001TLQ Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: TRANS NPN 20V 10A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 4A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: CPT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
Description: TRANS NPN 20V 10A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 4A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: CPT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
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Технічний опис 2SC5001TLQ Rohm Semiconductor
Description: TRANS NPN 20V 10A CPT3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 4A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V, Frequency - Transition: 150MHz, Supplier Device Package: CPT3, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 20 V, Power - Max: 1 W.
Інші пропозиції 2SC5001TLQ
| Фото | Назва | Виробник | Інформація |
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2SC5001TLQ | Виробник : Rohm Semiconductor |
Description: TRANS NPN 20V 10A CPT3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 4A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Frequency - Transition: 150MHz Supplier Device Package: CPT3 Part Status: Not For New Designs Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 1 W |
товару немає в наявності |
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| 2SC5001TLQ | Виробник : ROHM Semiconductor | Bipolar Transistors - BJT NPN; HFE RANK Q CPT3 |
товару немає в наявності |