Технічний опис 2SC5095-O(TE85L,F) Toshiba
Description: RF TRANS NPN 10V 10GHZ SC70, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 125°C (TJ), Gain: 13dB ~ 7dB, Power - Max: 100mW, Current - Collector (Ic) (Max): 15mA, Voltage - Collector Emitter Breakdown (Max): 10V, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 6V, Frequency - Transition: 10GHz, Noise Figure (dB Typ @ f): 1.8dB @ 2GHz, Supplier Device Package: SC-70, Part Status: Obsolete.
Інші пропозиції 2SC5095-O(TE85L,F)
| Фото | Назва | Виробник | Інформація |
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2SC5095-O(TE85L,F) | Виробник : Toshiba Semiconductor and Storage |
Description: RF TRANS NPN 10V 10GHZ SC70 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Gain: 13dB ~ 7dB Power - Max: 100mW Current - Collector (Ic) (Max): 15mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 6V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB @ 2GHz Supplier Device Package: SC-70 Part Status: Obsolete |
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2SC5095-O(TE85L,F) | Виробник : Toshiba Semiconductor and Storage |
Description: RF TRANS NPN 10V 10GHZ SC70 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Gain: 13dB ~ 7dB Power - Max: 100mW Current - Collector (Ic) (Max): 15mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 6V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB @ 2GHz Supplier Device Package: SC-70 Part Status: Obsolete |
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2SC5095-O(TE85L,F) | Виробник : Toshiba | Bipolar Transistors - BJT Radio-Freq Bipolar 15mA 100mW 10V |
товар відсутній |