Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > 2SC5096-R,LF

2SC5096-R,LF Toshiba Semiconductor and Storage

Виробник: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 10V 10GHZ SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 1.4dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 15mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
Supplier Device Package: SSM
Part Status: Obsolete

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Технічний опис 2SC5096-R,LF Toshiba Semiconductor and Storage

Description: RF TRANS NPN 10V 10GHZ SSM, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 125°C (TJ), Gain: 1.4dB, Power - Max: 100mW, Current - Collector (Ic) (Max): 15mA, Voltage - Collector Emitter Breakdown (Max): 10V, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V, Frequency - Transition: 10GHz, Noise Figure (dB Typ @ f): 1.4dB @ 1GHz, Supplier Device Package: SSM, Part Status: Obsolete.

Інші пропозиції 2SC5096-R,LF

Фото	Назва	Виробник	Інформація	Доступність	Ціна без ПДВ
	2SC5096-R,LF	Виробник : Toshiba Semiconductor and Storage	Description: RF TRANS NPN 10V 10GHZ SSM Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Gain: 1.4dB Power - Max: 100mW Current - Collector (Ic) (Max): 15mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.4dB @ 1GHz Supplier Device Package: SSM Part Status: Obsolete	товар відсутній