2SC5096-R,LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 10V 10GHZ SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V
Voltage - Collector Emitter Breakdown (Max): 10V
Current - Collector (Ic) (Max): 15mA
Power - Max: 100mW
Gain: 1.4dB
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: SSM
Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
Frequency - Transition: 10GHz
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Технічний опис 2SC5096-R,LF Toshiba Semiconductor and Storage
Description: RF TRANS NPN 10V 10GHZ SSM, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V, Voltage - Collector Emitter Breakdown (Max): 10V, Current - Collector (Ic) (Max): 15mA, Power - Max: 100mW, Gain: 1.4dB, Operating Temperature: 125°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: SC-75, SOT-416, Packaging: Tape & Reel (TR), Part Status: Obsolete, Supplier Device Package: SSM, Noise Figure (dB Typ @ f): 1.4dB @ 1GHz, Frequency - Transition: 10GHz.
Інші пропозиції 2SC5096-R,LF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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2SC5096-R,LF | Toshiba Semiconductor and Storage |
Description: RF TRANS NPN 10V 10GHZ SSM Part Status: Obsolete Supplier Device Package: SSM Noise Figure (dB Typ @ f): 1.4dB @ 1GHz Frequency - Transition: 10GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V Voltage - Collector Emitter Breakdown (Max): 10V Current - Collector (Ic) (Max): 15mA Power - Max: 100mW Gain: 1.4dB Operating Temperature: 125°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| 2SC5096-R,LF |
Виробник: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 10V 10GHZ SSM
Part Status: Obsolete
Supplier Device Package: SSM
Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
Frequency - Transition: 10GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V
Voltage - Collector Emitter Breakdown (Max): 10V
Current - Collector (Ic) (Max): 15mA
Power - Max: 100mW
Gain: 1.4dB
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Description: RF TRANS NPN 10V 10GHZ SSM
Part Status: Obsolete
Supplier Device Package: SSM
Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
Frequency - Transition: 10GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V
Voltage - Collector Emitter Breakdown (Max): 10V
Current - Collector (Ic) (Max): 15mA
Power - Max: 100mW
Gain: 1.4dB
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.