2SC5232BTE85LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 12V 0.5A SC59
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SC-59
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
| Кількість | Ціна |
|---|---|
| 25+ | 12.66 грн |
| 29+ | 10.59 грн |
| 100+ | 8.99 грн |
| 500+ | 7.52 грн |
| 1000+ | 7.16 грн |
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Технічний опис 2SC5232BTE85LF Toshiba Semiconductor and Storage
Description: TRANS NPN 12V 0.5A SC59, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Current - Collector (Ic) (Max): 500 mA, Supplier Device Package: SC-59, Frequency - Transition: 130MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA, Operating Temperature: 125°C (TJ), Transistor Type: NPN, Power - Max: 150 mW, Voltage - Collector Emitter Breakdown (Max): 12 V.
Інші пропозиції 2SC5232BTE85LF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
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2SC5232BTE85LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 12V 0.5A SC59 Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Current - Collector (Ic) (Max): 500 mA Supplier Device Package: SC-59 Frequency - Transition: 130MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA Operating Temperature: 125°C (TJ) Transistor Type: NPN Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 12 V |
товару немає в наявності |
В кошику од. на суму грн. |
| 2SC5232BTE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 12V 0.5A SC59
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SC-59
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Description: TRANS NPN 12V 0.5A SC59
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SC-59
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
товару немає в наявності
В кошику
од. на суму грн.