
2SC5232BTE85LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 12V 0.5A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Description: TRANS NPN 12V 0.5A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
на замовлення 1290 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна |
---|---|
25+ | 12.73 грн |
29+ | 10.65 грн |
100+ | 9.04 грн |
500+ | 7.57 грн |
1000+ | 7.20 грн |
Відгуки про товар
Написати відгук
Технічний опис 2SC5232BTE85LF Toshiba Semiconductor and Storage
Description: TRANS NPN 12V 0.5A SC59, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 125°C (TJ), Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V, Frequency - Transition: 130MHz, Supplier Device Package: SC-59, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 12 V, Power - Max: 150 mW.
Інші пропозиції 2SC5232BTE85LF
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
---|---|---|---|---|---|
![]() |
2SC5232BTE85LF | Виробник : Toshiba Semiconductor and Storage |
Description: TRANS NPN 12V 0.5A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V Frequency - Transition: 130MHz Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 150 mW |
товару немає в наявності |