Технічний опис 2SC5347AF-TD-E ON Semiconductor
Description: RF TRANS NPN 12V 4.7GHZ PCP, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 8dB, Power - Max: 1.3W, Current - Collector (Ic) (Max): 150mA, Voltage - Collector Emitter Breakdown (Max): 12V, DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 50mA, 5V, Frequency - Transition: 4.7GHz, Noise Figure (dB Typ @ f): 1.8dB @ 1GHz, Supplier Device Package: PCP.
Інші пропозиції 2SC5347AF-TD-E
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
2SC5347AF-TD-E | Виробник : onsemi |
 Description: RF TRANS NPN 12V 4.7GHZ PCPPackaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 8dB Power - Max: 1.3W Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 50mA, 5V Frequency - Transition: 4.7GHz Noise Figure (dB Typ @ f): 1.8dB @ 1GHz Supplier Device Package: PCP |
товару немає в наявності |
|
|
|
2SC5347AF-TD-E | Виробник : onsemi |
Description: RF TRANS NPN 12V 4.7GHZ PCP Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 8dB Power - Max: 1.3W Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 50mA, 5V Frequency - Transition: 4.7GHz Noise Figure (dB Typ @ f): 1.8dB @ 1GHz Supplier Device Package: PCP |
товару немає в наявності |
|
 |
2SC5347AF-TD-E | Виробник : onsemi |
RF Bipolar Transistors VHF TO UHF WIDEBAND AMPLIFIER |
товару немає в наявності |