Технічний опис 2SC5551AF-TD-E ON Semiconductor
Description: RF TRANS NPN 30V 3.5GHZ PCP, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Power - Max: 1.3W, Current - Collector (Ic) (Max): 300mA, Voltage - Collector Emitter Breakdown (Max): 30V, DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 50mA, 5V, Frequency - Transition: 3.5GHz, Supplier Device Package: PCP, Part Status: Obsolete.
Інші пропозиції 2SC5551AF-TD-E
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| 2SC5551AF-TD-E | Виробник : ON Semiconductor |
 Trans RF BJT NPN 30V 0.3A 1300mW 4-Pin(3+Tab) SOT-89 T/R |
товару немає в наявності |
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2SC5551AF-TD-E | Виробник : onsemi |
Description: RF TRANS NPN 30V 3.5GHZ PCP Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Power - Max: 1.3W Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 30V DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 50mA, 5V Frequency - Transition: 3.5GHz Supplier Device Package: PCP Part Status: Obsolete |
товару немає в наявності |
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2SC5551AF-TD-E | Виробник : onsemi |
Description: RF TRANS NPN 30V 3.5GHZ PCP Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Power - Max: 1.3W Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 30V DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 50mA, 5V Frequency - Transition: 3.5GHz Supplier Device Package: PCP Part Status: Obsolete |
товару немає в наявності |
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2SC5551AF-TD-E | Виробник : onsemi |
RF Bipolar Transistors RF Transistors 30V,300mA,fT=3.5GHz |
товару немає в наявності |