Технічний опис 2SC5606-T1-A Renesas
Description: RF TRANS NPN 3.3V 21GHZ SOT523, Packaging: Tape & Reel (TR), Package / Case: SOT-523, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 14dB, Power - Max: 115mW, Current - Collector (Ic) (Max): 35mA, Voltage - Collector Emitter Breakdown (Max): 3.3V, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 2V, Frequency - Transition: 21GHz, Noise Figure (dB Typ @ f): 1.2dB @ 2GHz, Supplier Device Package: SOT-523.
Інші пропозиції 2SC5606-T1-A
| Фото | Назва | Виробник | Інформація |
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2SC5606-T1-A | Виробник : CEL |
Description: RF TRANS NPN 3.3V 21GHZ SOT523 Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 14dB Power - Max: 115mW Current - Collector (Ic) (Max): 35mA Voltage - Collector Emitter Breakdown (Max): 3.3V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 2V Frequency - Transition: 21GHz Noise Figure (dB Typ @ f): 1.2dB @ 2GHz Supplier Device Package: SOT-523 |
товару немає в наявності |
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2SC5606-T1-A | Виробник : CEL |
Description: RF TRANS NPN 3.3V 21GHZ SOT523 Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 14dB Power - Max: 115mW Current - Collector (Ic) (Max): 35mA Voltage - Collector Emitter Breakdown (Max): 3.3V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 2V Frequency - Transition: 21GHz Noise Figure (dB Typ @ f): 1.2dB @ 2GHz Supplier Device Package: SOT-523 |
товару немає в наявності |
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2SC5606-T1-A | Виробник : CEL |
 RF Bipolar Transistors NPN High Frequency |
товару немає в наявності |