Технічний опис 2SC5706-P-E ON Semiconductor
Description: TRANS NPN 100V 5A TP, Packaging: Bag, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Transistor Type: NPN, Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 2A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V, Frequency - Transition: 400MHz, Supplier Device Package: TP, Part Status: Obsolete, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 800 mW.
Інші пропозиції 2SC5706-P-E
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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2SC5706-P-E | Виробник : onsemi |
Description: TRANS NPN 100V 5A TP Packaging: Bag Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 400MHz Supplier Device Package: TP Part Status: Obsolete Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 800 mW |
товару немає в наявності |