2SC5831 onsemi
Виробник: onsemi
Description: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 4mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 5V
Frequency - Transition: 180MHz
Supplier Device Package: TO-126ML
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 55 V
Power - Max: 1.5 W
| Кількість | Ціна |
|---|---|
| 1432+ | 18.23 грн |
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Технічний опис 2SC5831 onsemi
Description: POWER BIPOLAR TRANSISTOR NPN, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: NPN - Darlington, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 4mA, 1A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 5V, Frequency - Transition: 180MHz, Supplier Device Package: TO-126ML, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 55 V, Power - Max: 1.5 W.