Технічний опис 2SC5865 TL Q ROHM
Description: TRANS NPN 60V 1A TSMT3, Power - Max: 500 mW, Voltage - Collector Emitter Breakdown (Max): 60 V, Current - Collector (Ic) (Max): 1 A, Supplier Device Package: TSMT3, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V, Current - Collector Cutoff (Max): 1µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: SC-96, Packaging: Tape & Reel (TR).
Інші пропозиції 2SC5865 TL Q
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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2SC5865TLQ | Виробник : Rohm Semiconductor |
 Description: TRANS NPN 60V 1A TSMT3Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 1 A Supplier Device Package: TSMT3 Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-96 Packaging: Tape & Reel (TR) |
товару немає в наявності |
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| 2SC5865TLQ | Виробник : ROHM Semiconductor |
Bipolar Transistors - BJT NPN 60V 1A |
товару немає в наявності |