Технічний опис 2SC6097-E onsemi
Description: TRANS NPN 60V 3A TP, Packaging: Bag, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 135mV @ 100mA, 1A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V, Frequency - Transition: 390MHz, Supplier Device Package: TP, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 800 mW.
Інші пропозиції 2SC6097-E
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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2SC6097-E | Виробник : ON Semiconductor |
 Trans GP BJT NPN 60V 3A 800mW 3-Pin(3+Tab) TP Bag |
товар відсутній |
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2SC6097-E | Виробник : onsemi |
Description: TRANS NPN 60V 3A TP Packaging: Bag Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 135mV @ 100mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V Frequency - Transition: 390MHz Supplier Device Package: TP Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 800 mW |
товар відсутній |