Технічний опис 2SD1060S-1E ON Semiconductor
Description: TRANS NPN 50V 5A TO-220-3, Power - Max: 1.75 W, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 5 A, Part Status: Active, Supplier Device Package: TO-220-3, Frequency - Transition: 30MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 1A, 2V, Current - Collector Cutoff (Max): 100µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Інші пропозиції 2SD1060S-1E за ціною від 40.56 грн до 153.29 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2SD1060S-1E | onsemi |
 Description: TRANS NPN 50V 5A TO-220-3Power - Max: 1.75 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 5 A Part Status: Active Supplier Device Package: TO-220-3 Frequency - Transition: 30MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 1A, 2V Current - Collector Cutoff (Max): 100µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 4892 шт: термін постачання 21-31 дні (днів) |
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2SD1060S-1E | onsemi |
Bipolar Transistors - BJT BIP NPN 5A 50V |
на замовлення 218 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| 2SD1060S-1E |
|
Виробник: onsemi
Description: TRANS NPN 50V 5A TO-220-3
Power - Max: 1.75 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 5 A
Part Status: Active
Supplier Device Package: TO-220-3
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 1A, 2V
Current - Collector Cutoff (Max): 100µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: TRANS NPN 50V 5A TO-220-3
Power - Max: 1.75 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 5 A
Part Status: Active
Supplier Device Package: TO-220-3
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 1A, 2V
Current - Collector Cutoff (Max): 100µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 4892 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 153.29 грн |
| 50+ | 71.38 грн |
| 100+ | 63.96 грн |
| 500+ | 47.80 грн |
| 1000+ | 43.87 грн |
| 2000+ | 40.56 грн |
| 2SD1060S-1E |
|
Виробник: onsemi
Bipolar Transistors - BJT BIP NPN 5A 50V
Bipolar Transistors - BJT BIP NPN 5A 50V
на замовлення 218 шт:
термін постачання 21-30 дні (днів)