2SD1145F-AE onsemi
Виробник: onsemi
Description: BIP NPN 5A 20V
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: 3-MP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Part Status: Active
Packaging: Bulk
| Кількість | Ціна |
|---|---|
| 1402+ | 15.29 грн |
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Технічний опис 2SD1145F-AE onsemi
Description: BIP NPN 5A 20V, Power - Max: 900 mW, Voltage - Collector Emitter Breakdown (Max): 20 V, Current - Collector (Ic) (Max): 5 A, Supplier Device Package: 3-MP, Frequency - Transition: 120MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V, Current - Collector Cutoff (Max): 1µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 Long Body, Part Status: Active, Packaging: Bulk.