2SD1153-AE onsemi

Description: NPN DARLINGTON TRANSISTOR, Power - Max: 900 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 1.5 A, Supplier Device Package: 3-MP, Frequency - Transition: 120MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 500mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN - Darlington, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 Long Body, Part Status: Active, Packaging: Bulk.