2SD1190 onsemi
Виробник: onsemi
Description: POWER BIPOLAR TRANSISTOR NPN
Power - Max: 1.75 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-220AB
Frequency - Transition: 20MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
Current - Collector Cutoff (Max): 100µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 4mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3
Part Status: Active
Packaging: Bulk
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Технічний опис 2SD1190 onsemi
Description: POWER BIPOLAR TRANSISTOR NPN, Power - Max: 1.75 W, Voltage - Collector Emitter Breakdown (Max): 60 V, Current - Collector (Ic) (Max): 4 A, Supplier Device Package: TO-220AB, Frequency - Transition: 20MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V, Current - Collector Cutoff (Max): 100µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 4mA, 2A, Operating Temperature: 150°C (TJ), Transistor Type: NPN - Darlington, Mounting Type: Through Hole, Package / Case: TO-220-3, Part Status: Active, Packaging: Bulk.