Технічний опис 2SD1624T-TD-H ON Semiconductor
Description: TRANS NPN 50V 3A PCP, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V, Frequency - Transition: 150MHz, Supplier Device Package: PCP, Part Status: Obsolete, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 500 mW.
Інші пропозиції 2SD1624T-TD-H
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| 2SD1624T-TD-H | Виробник : ON Semiconductor |
 Trans GP BJT NPN 50V 3A 500mW 4-Pin(3+Tab) SOT-89 T/R |
товару немає в наявності |
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2SD1624T-TD-H | Виробник : ONSEMI |
Description: ONSEMI - 2SD1624T-TD-H - BIPOLAR TRANSISTOR MSL: MSL 1 - unbegrenzt SVHC: Lead (19-Jan-2021) |
товару немає в наявності |
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2SD1624T-TD-H | Виробник : onsemi |
Description: TRANS NPN 50V 3A PCP Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 150MHz Supplier Device Package: PCP Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
товару немає в наявності |