
на замовлення 930 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна |
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4+ | 94.41 грн |
1000+ | 26.31 грн |
2000+ | 18.83 грн |
5000+ | 17.29 грн |
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Технічний опис 2SD2212T100 ROHM Semiconductor
Description: TRANS NPN DARL 60V 2A MPT3, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Transistor Type: NPN - Darlington, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 2V, Frequency - Transition: 80MHz, Supplier Device Package: MPT3, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 2 W.
Інші пропозиції 2SD2212T100
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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2SD2212T100 | Виробник : Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 2V Frequency - Transition: 80MHz Supplier Device Package: MPT3 Part Status: Not For New Designs Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2 W |
товару немає в наявності |
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2SD2212T100 | Виробник : Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 2V Frequency - Transition: 80MHz Supplier Device Package: MPT3 Part Status: Not For New Designs Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2 W |
товару немає в наявності |