2SD2656T106 Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: TRANS NPN 30V 1A UMT3
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: UMT3
Frequency - Transition: 400MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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Технічний опис 2SD2656T106 Rohm Semiconductor
Description: TRANS NPN 30V 1A UMT3, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 30 V, Current - Collector (Ic) (Max): 1 A, Part Status: Active, Supplier Device Package: UMT3, Frequency - Transition: 400MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR).
Інші пропозиції 2SD2656T106 за ціною від 5.94 грн до 37.28 грн
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2SD2656T106 | ROHM Semiconductor |
Bipolar Transistors - BJT NPN 30V 1A |
на замовлення 938 шт: термін постачання 21-30 дні (днів) |
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2SD2656T106 | Rohm Semiconductor |
Description: TRANS NPN 30V 1A UMT3 Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: UMT3 Frequency - Transition: 400MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
на замовлення 7985 шт: термін постачання 21-31 дні (днів) |
|
| 2SD2656T106 |
|
Виробник: ROHM Semiconductor
Bipolar Transistors - BJT NPN 30V 1A
Bipolar Transistors - BJT NPN 30V 1A
на замовлення 938 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 34.63 грн |
| 16+ | 20.72 грн |
| 100+ | 11.67 грн |
| 500+ | 8.70 грн |
| 1000+ | 7.73 грн |
| 3000+ | 6.56 грн |
| 6000+ | 5.94 грн |
| 2SD2656T106 |
|
Виробник: Rohm Semiconductor
Description: TRANS NPN 30V 1A UMT3
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: UMT3
Frequency - Transition: 400MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: TRANS NPN 30V 1A UMT3
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: UMT3
Frequency - Transition: 400MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
на замовлення 7985 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.28 грн |
| 14+ | 22.06 грн |
| 100+ | 14.04 грн |
| 500+ | 9.89 грн |
| 1000+ | 8.83 грн |