Технічний опис 2SJ355-T1-AZ NEC
Description: MOSFET P-CH 30V 2A SC62, Drain to Source Voltage (Vdss): 30 V, Part Status: Obsolete, Supplier Device Package: SC-62, Vgs(th) (Max) @ Id: 2V @ 1mA, Rds On (Max) @ Id, Vgs: 350mOhm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: TO-243AA, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V.
Інші пропозиції 2SJ355-T1-AZ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| 2SJ355-T1-AZ | Виробник : Renesas Electronics America Inc |
 Description: MOSFET P-CH 30V 2A SC62Drain to Source Voltage (Vdss): 30 V Part Status: Obsolete Supplier Device Package: SC-62 Vgs(th) (Max) @ Id: 2V @ 1mA Rds On (Max) @ Id, Vgs: 350mOhm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V |
товару немає в наявності |