2SJ635-TL-E ONSEMI
Виробник: ONSEMI
Description: ONSEMI - 2SJ635-TL-E - 2SJ635 - P-CHANNEL SILICON MOSFET
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
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Технічний опис 2SJ635-TL-E ONSEMI
Description: 2SJ635 - P-CHANNEL SILICON MOSFE, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 6A, 10V, Power Dissipation (Max): 1W (Ta), 30W (Tc), Vgs(th) (Max) @ Id: 2.6V @ 1mA, Supplier Device Package: TP, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 20 V.
Інші пропозиції 2SJ635-TL-E за ціною від 28.84 грн до 28.84 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||
|---|---|---|---|---|---|---|---|
| 2SJ635-TL-E | onsemi |
Description: 2SJ635 - P-CHANNEL SILICON MOSFE Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 6A, 10V Power Dissipation (Max): 1W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 1mA Supplier Device Package: TP Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 20 V |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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| 2SJ635-TL-E |
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на замовлення 5080 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. |
| 2SJ635-TL-E |
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Виробник: onsemi
Description: 2SJ635 - P-CHANNEL SILICON MOSFE
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 6A, 10V
Power Dissipation (Max): 1W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: TP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 20 V
Description: 2SJ635 - P-CHANNEL SILICON MOSFE
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 6A, 10V
Power Dissipation (Max): 1W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: TP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 20 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 761+ | 28.84 грн |