2SJ650 onsemi
Виробник: onsemi
Description: MOSFET P-CH 60V 12A TO220ML
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Supplier Device Package: TO-220ML
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Відгуки про товар
Написати відгук
Технічний опис 2SJ650 onsemi
Description: MOSFET P-CH 60V 12A TO220ML, Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Supplier Device Package: TO-220ML, Power Dissipation (Max): 2W (Ta), 20W (Tc), Rds On (Max) @ Id, Vgs: 135mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Bulk.