2SJ652-1E ON Semiconductor

Description: MOSFET P-CH 60V 28A TO220F-3SG, Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Obsolete, Supplier Device Package: TO-220F-3SG, Power Dissipation (Max): 2W (Ta), 30W (Tc), Rds On (Max) @ Id, Vgs: 38mOhm @ 14A, 10V, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.