Технічний опис 2SJ652-1E ON Semiconductor
Description: MOSFET P-CH 60V 28A TO220F-3SG, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), Rds On (Max) @ Id, Vgs: 38mOhm @ 14A, 10V, Power Dissipation (Max): 2W (Ta), 30W (Tc), Supplier Device Package: TO-220F-3SG, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 20 V.
Інші пропозиції 2SJ652-1E
| Фото | Назва | Виробник | Інформація |
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Ціна |
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2SJ652-1E | Виробник : ON Semiconductor |
 Trans MOSFET P-CH Si 60V 28A 3-Pin(3+Tab) TO-220FP Tube |
товару немає в наявності |
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2SJ652-1E | Виробник : onsemi |
Description: MOSFET P-CH 60V 28A TO220F-3SG Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 14A, 10V Power Dissipation (Max): 2W (Ta), 30W (Tc) Supplier Device Package: TO-220F-3SG Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 20 V |
товару немає в наявності |