2SJ655 onsemi

Description: MOSFET P-CH 100V 12A TO220ML, Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Part Status: Obsolete, Supplier Device Package: TO-220ML, Power Dissipation (Max): 2W (Ta), 25W (Tc), Rds On (Max) @ Id, Vgs: 136mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Bulk.