Технічний опис 2SJ673-AZ Renesas Electronics
Description: MOSFET P-CH 60V 36A TO220, Packaging: Bulk, Package / Case: TO-220-3 Isolated Tab, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V, Power Dissipation (Max): 2W (Ta), 32W (Tc), Supplier Device Package: TO-220 Isolated Tab, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 10 V.
Інші пропозиції 2SJ673-AZ
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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2SJ673-AZ | Виробник : Renesas Electronics Corporation |
![]() Packaging: Bulk Package / Case: TO-220-3 Isolated Tab Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V Power Dissipation (Max): 2W (Ta), 32W (Tc) Supplier Device Package: TO-220 Isolated Tab Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 10 V |
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