2SK1518-E Renesas

Description: MOSFET N-CH 500V 20A TO3P, Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-3P, Power Dissipation (Max): 120W (Tc), Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tube.